rzr025p01 transistors 1/5 1.5v drive pch mosfet rzr025p01 z features 1) low on-resistance. 2) built-in g-s pr otection diode. 3) small and surface mount package (tsmt3). 4) low voltage drive (1.5v). z application switching z structure silicon p-channel mosfet z dimensions (unit : mm) each lead has same dimensions (1) gate (2) source (3) drain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.950.95 0.4 abbreviated symbol : yc z packaging specifications z equivalent circuit package code taping basic ordering unit (pieces) rzr025p01 tl 3000 type z absolute maximum ratings (ta=25 c) ?1 ?1 ?2 parameter v v dss symbol ?12 v v gss 10 a i d 2.5 a i dp 10 a i s ?0.8 a i sp ?10 w p d 1.0 c tch 150 c tstg ?55 to +150 limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ?1 pw10s, duty cycle1% ?2 mounted on a ceramic board source current (body diode) z thermal resistance c / w rth (ch-a) 125 parameter symbol limits unit channel to ambient ? when mounted on a ceramic board. ? (1) gate (2) source (3) drain ?1 esd protection diode ?2 body diode ?2 ?1 (3) (1) (2)
rzr025p01 transistors 2/5 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ?? 10 av gs =10v, v ds =0v v dd ?6v, i d = ?2.5a ?12 ?? vi d = ?1ma, v gs =0v ??? 1 av ds = ?12v, v gs =0v ?0.3 ?? 1.0 v v ds = ?6v, i d = ?1ma ? 44 61 i d = ?2.5a, v gs = ?4.5v ? 60 84 m ? m? m? i d = ?1.2a, v gs = ?2.5v ? 81 121 i d = ?1.2a, v gs = ?1.8v m? ? 110 220 i d = ?0.5a, v gs = ?1.5v 3.5 ?? sv ds = ?6v, i d = ?2.5a ? 1350 ? pf v ds = ?6v ? 130 125 ? pf v gs =0v ? 9 ? pf f=1mhz ? 35 ? ns ? 130 ? ns ? 85 ? ns ? 13 ? ns ? 2.5 ? nc ? 2.0 ? nc v gs = ?4.5v ?? nc v dd ?6 v i d = ?1.2a v gs = ?4.5v r l =5? r l 2.4?, r g =10? r g =10? ?pulsed ? ? ? ? ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ??? 1.2 v forward voltage ? pulsed i s = ?2.5a, v gs =0v parameter symbol min. typ. max. unit conditions ?
rzr025p01 transistors 3/5 z electrical characteristic curves 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] v gs = -1.5v pulsed ta=125 ta=75 ta=25 ta= -25 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 drain-source voltage -v ds [v] drain current -i d [a] v gs = -10v v gs = -4.5v v gs = -4.0v v gs = -2.5v v gs = -2.0v v gs = -1.6v v gs = -1.2v ta=25 pulsed 0.01 0.1 1 10 0.0 0.5 1.0 1.5 gate-source voltage : -v gs [v] drain current : -i d [a] v ds = -6v pulsed ta= 125 c ta= 75 ta= 25 ta= - 25 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] ta=25 pulsed v gs = -1.5v v gs = -1.8v v gs = -2.5v v gs = -4.5v . 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 source-drain voltage : -v sd [v] reverse drain current : -is [a] v gs =0v pulsed ta=125 ta=75 ta=25 ta=-25 0 2 4 6 8 10 0246810 drain-source voltage -v ds [v] drain current -i d [a] v gs = -1.2v v gs = -1.5v ta=25 pulsed v gs = -10v v gs = -4.5v v gs = -2.5v v gs = -1.8v 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] v gs = -2.5v pulsed ta=125 ta=75 ta=25 ta= -25 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] v gs = -4.5v pulsed ta=125 ta=75 ta=25 ta= -25 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-stat e resistance : r ds (on) [m ? ] v gs = -1.8v pulsed ta=125 ta=75 ta=25 ta= -25 fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 static drain-source on-state resistance vs. drain current( )
rzr025p01 transistors 4/5 0 50 100 150 200 0510 gate-source voltage : -v gs [v] static drain-source on-stat e resistance : r ds (on) [m ? ] ta=25 pulsed i d = -1.2a i d = -2.5a 0 1 2 3 4 5 0 2 4 6 8 10 12 14 total gate charge : qg [nc] gate-source voltage : -v gs [v] ta=25 v dd = -6v i d = -2.5a r g =10 ? pulsed 10 100 1000 10000 0.01 0.1 1 10 100 drain-source voltage : -v ds [v] capacitance : c [pf] ciss coss crss ta=25 f=1mhz v gs =0v 0 1 10 100 0.1 1.0 10.0 drain current : -i d [a] forward transfer admittance : |yfs| [s] v ds = -6v pulsed ta= -25 ta=25 ta=75 ta=125 1 10 100 1000 0.01 0.1 1 10 drain current : -i d [a] switching time : t [ns] tr tf td(on) t d(off) ta=25 v dd = -6v v gs =-4.5v r g =10 ? pulsed fig.10 static drain-source on-state resistance vs. gate source voltage fig.11 forward transfer admittance vs. drain current fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.14 switching characteristics
rzr025p01 transistors 5/5 z measurement circuits fig.15 switching time test circuit v gs r g v ds d.u.t. i d r l v dd fig.16 switching time waveforms 90% 90% 90% 10% 10% 10% pulse width 50% v gs v ds t on t off t r t d(on) t f t d(off) 50% fig.17 gate charge test circuit v gs i g (const.) r g v ds d.u.t. i d r l v dd fig.18 gate charge waveform v g v gs charge q g q gs q gd z notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit.
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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